Near infrared photoluminescence from bismuth-doped nanoporous silica thin films
نویسندگان
چکیده
منابع مشابه
hermal quenching of photoluminescence from Er-doped GaN thin films
The green (537 and 558 nm) and near infrared (1.54 mm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the 31 4 2 4 integrated green Er PL intensity ( S / H → I ) remained nearly constant up to 150 K, but decreased at higher temperatures 3 / 2 11 /...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4815939